default search action
"Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM ..."
Shanshan Xie et al. (2022)
- Shanshan Xie, Can Ni, Pulkit Jain, Fatih Hamzaoglu, Jaydeep P. Kulkarni:
Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs. VLSI Technology and Circuits 2022: 112-113
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.