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"A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density ..."

Mario Sako et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185237

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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  dblp key:
  - conf/vlsit/SakoNKNFMNKSYUK23
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  - https://dblp.org/rec/conf/vlsit/SakoNKNFMNKSYUK23
Mario Sako, T. Nakajima, Fumihiro Kono, T. Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Y. Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, M. Kano, Hiroshi Sugawara, A. H. Sravan, K. Hayashi, Toshiyuki Kouchi, Y. Watanabe:
A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm² bit density with 3.2Gbps interface and 205MB/s program throughput. VLSI Technology and Circuits 2023: 1-2

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