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"Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer ..."

Seongho Kim et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185400

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Seongho Kim, Young-Keun Park, Gyu Soup Lee, Eui Joong Shin, Woon-San Ko, Hi Deok Lee, Ga-Won Lee, Byung Jin Cho:
Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor. VLSI Technology and Circuits 2023: 1-2

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