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"First Demonstration of BEOL-Compatible Write-Enhanced ..."

Leming Jiao et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185255

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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Leming Jiao, Kaizhen Han, Zuopu Zhou, Zijie Zheng, Xiaolin Wang, Qiwen Kong, Yuye Kang, Jishen Zhang, Long Liu, Xiao Gong:
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices. VLSI Technology and Circuits 2023: 1-2

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