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"NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great ..."

E. R. Hsieh et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830515

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-04

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  - conf/vlsit/HsiehCTLLLHSGC22
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  - https://dblp.org/rec/conf/vlsit/HsiehCTLLLHSGC22
E. R. Hsieh, J. K. Chang, T. Y. Tang, Y. J. Li, C. W. Liang, M. Y. Lin, S. Y. Huang, C. J. Su, J. C. Guo, Steve S. Chung:
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 10¹⁰ Cycles of Endurance, and Decade Lifetime at 103 °C. VLSI Technology and Circuits 2022: 359-360

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