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"High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec ..."

Yi Han et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185373

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

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  dblp key:
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  - https://dblp.org/rec/conf/vlsit/HanSBGKZ23
Yi Han, Jingxuan Sun, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing-Tai Zhao:
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain. VLSI Technology and Circuits 2023: 1-2

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