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"Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy ..."

N. Breil et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185379

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-08

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  dblp key:
  - conf/vlsit/BreilLAJVNBPLGG23
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  - https://dblp.org/rec/conf/vlsit/BreilLAJVNBPLGG23
N. Breil, B.-C. Lee, J. Avila Avendano, J. Jewell, M. Vellaikal, E. Newman, E. M. Bazizi, A. Pal, L. Liu, Oleg Gluschenkov, A. Greene, S. Mochizuki, Nicolas Loubet, B. Colombeau, B. Haran:
Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10^-9 Ω.cm² Contact Resistivity in Nonplanar FETs. VLSI Technology and Circuits 2023: 1-2

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