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"A 0.8V V_MIN Ultra-Low Leakage High Density 6T SRAM in 40nm CMOS ..."

Ashish Kumar, Mohammad Aftab Alam, Gangaikondan S. Visweswaran (2019)

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DOI: 10.1109/VLSID.2019.00129

access: closed

type: Conference or Workshop Paper

metadata version: 2022-11-14

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Ashish Kumar, Mohammad Aftab Alam, Gangaikondan S. Visweswaran:
A 0.8V V_MIN Ultra-Low Leakage High Density 6T SRAM in 40nm CMOS Technology Using Repeated-Pulse Wordline Suppression Scheme. VLSID 2019: 547-548

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