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"Design of 3 bit/cell NAND Memory Array Based on Ferroelectric Field Effect ..."

Albert Daimari et al. (2024)

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DOI: 10.1109/VLSID60093.2024.00026

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-08

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Albert Daimari, Ankit Chakusaru Deori, Amab Ratna Pawe, Ratul Kumar Baruah:
Design of 3 bit/cell NAND Memory Array Based on Ferroelectric Field Effect Transistor. VLSID 2024: 125-128

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