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"A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power ..."

Hoyoung Shin et al. (2020)

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DOI: 10.1109/VLSICIRCUITS18222.2020.9162813

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-24

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Hoyoung Shin, Jisung Kim, Shinwuk Kang, Sungung Kwak:
A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation. VLSI Circuits 2020: 1-2

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