"Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write ..."

Masanori Natsui et al. (2020)

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DOI: 10.1109/VLSICIRCUITS18222.2020.9162774

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu:
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. VLSI Circuits 2020: 1-2

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