- Masanori Natsui, Akira Tamakoshi, H. Honjo, T. Watanabe, Takashi Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, Mitsuo Yasuhira, Y. Ma, Hui Shen, Shunsuke Fukami, H. Sato, S. Ikeda, H. Ohno, Tetsuo Endoh, Takahiro Hanyu:
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. VLSI Circuits 2020: 1-2
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