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"2nd generation embedded DRAM with 4X lower self refresh power ..."

Mesut Meterelliyoz et al. (2014)

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DOI: 10.1109/VLSIC.2014.6858415

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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Mesut Meterelliyoz, Fuad H. Al-amoody, Umut Arslan, Fatih Hamzaoglu, Luke Hood, Manoj B. Lal, Jeffrey L. Miller, Anand Ramasundar, Dan Soltman, Ifar Wan, Yih Wang, Kevin Zhang:
2^nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology. VLSIC 2014: 1-2

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