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"Reducing Breakdown Voltage in a Bipolar Impact Ionization MOSFET (BI-MOS) ..."

Akshay Balaji, Sneh Saurabh (2021)

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DOI: 10.1109/VLSI-SOC53125.2021.9606982

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-19

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Akshay Balaji, Sneh Saurabh:
Reducing Breakdown Voltage in a Bipolar Impact Ionization MOSFET (BI-MOS) using Gate-Source Underlap. VLSI-SoC 2021: 1-6

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