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"A 10T Subthreshold SRAM Cell with Minimal Bitline Switching for Ultra-Low ..."

Swaati, Bishnu Prasad Das (2017)

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DOI: 10.1007/978-981-10-7470-7_48

access: closed

type: Conference or Workshop Paper

metadata version: 2018-01-06

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  - conf/vdat/SwaatiD17
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Swaati, Bishnu Prasad Das:
A 10T Subthreshold SRAM Cell with Minimal Bitline Switching for Ultra-Low Power Applications. VDAT 2017: 487-495

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