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"A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs."

Feng Zhang et al. (2019)

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DOI: 10.1109/SMACD.2019.8795257

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-06

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  dblp key:
  - conf/smacd/ZhangLHFB19
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  - https://dblp.org/rec/conf/smacd/ZhangLHFB19
Feng Zhang, Linan Li, Qiang Huo, Cong Fang, Wenqiang Ba:
A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs. SMACD 2019: 209-212

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