"Innovative GeS2/Sb2Te3 based phase change memory for low power applications."

Julia Kluge et al. (2017)

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DOI: 10.1109/NVMTS.2017.8171305

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola:
Innovative GeS2/Sb2Te3 based phase change memory for low power applications. NVMTS 2017: 1-4

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