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"Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by ..."
Shouhei Fukuyama et al. (2018)
- Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi:
Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. NVMTS 2018: 1-4
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