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"Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs."
Chaymaa Haloui et al. (2020)
- Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle:
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. MIXDES 2020: 181-184
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