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"Power amplifier design using GaN HEMT in class-AB mode for LTE ..."

Nabil Khalid, Tahir Abbas, Mojeeb Bin Ihsan (2015)

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DOI: 10.1109/IWCMC.2015.7289166

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-24

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  - conf/iwcmc/KhalidAI15
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Nabil Khalid, Tahir Abbas, Mojeeb Bin Ihsan:
Power amplifier design using GaN HEMT in class-AB mode for LTE communication band. IWCMC 2015: 685-689

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