![](https://dblp1.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp1.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp1.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
default search action
"A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation ..."
Harold Pilo et al. (2011)
- Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Frank Pavlik, Adnan Seferagic, Liang-Yu Chen, Shang-Bin Ko, Carl Radens:
A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements. ISSCC 2011: 254-256
![](https://dblp1.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.