


default search action
"A 38Mb/mm2 380/540mV Dual-Rail SRAM in 3nm-FinFET Technology."
Harold Pilo et al. (2025)
- Harold Pilo, John Barth, Kapil Dev Dwivedi, Peter Lee, Vikram Kumar, Prasanna Nalawar, Yogeshbhai Patel, Shailendra Sharad, Shakti Singh:

A 38Mb/mm2 380/540mV Dual-Rail SRAM in 3nm-FinFET Technology. ISSCC 2025: 498-500

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.


Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCID













