"5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light ..."

Jaekyu Lee et al. (2020)

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DOI: 10.1109/ISSCC19947.2020.9063092

access: closed

type: Conference or Workshop Paper

metadata version: 2020-04-19

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Jaekyu Lee, Seung Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim, Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, JuYoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, Hyunchul Kim, Chong Kwang Chang, JinGyun Kim, Kyoungmin Koh, Hanjin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang:
5.5 A 2.1e^- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. ISSCC 2020: 102-104

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