"A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with ..."

Eric Karl et al. (2012)

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DOI: 10.1109/ISSCC.2012.6176988

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-26

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Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr:
A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry. ISSCC 2012: 230-232

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