BibTeX record conf/isscc/KangJKKCKRKLKLY16

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  author    = {Dongku Kang and
               Woopyo Jeong and
               Chulbum Kim and
               Doo{-}Hyun Kim and
               Yong{-}Sung Cho and
               Kyung{-}Tae Kang and
               Jinho Ryu and
               Kyung{-}Min Kang and
               Sungyeon Lee and
               Wandong Kim and
               Hanjun Lee and
               Jaedoeg Yu and
               Nayoung Choi and
               Dong{-}Su Jang and
               Jeong{-}Don Ihm and
               Doo{-}Gon Kim and
               Young{-}Sun Min and
               Moosung Kim and
               Ansoo Park and
               Jae{-}Ick Son and
               In{-}Mo Kim and
               Pansuk Kwak and
               Bong{-}Kil Jung and
               Doosub Lee and
               Hyunggon Kim and
               Hyang{-}Ja Yang and
               Dae{-}Seok Byeon and
               Ki{-}Tae Park and
               Kyehyun Kyung and
               Jeong{-}Hyuk Choi},
  title     = {7.1 256Gb 3b/cell {V-NAND} flash memory with 48 stacked {WL} layers},
  booktitle = {2016 {IEEE} International Solid-State Circuits Conference, {ISSCC}
               2016, San Francisco, CA, USA, January 31 - February 4, 2016},
  pages     = {130--131},
  publisher = {{IEEE}},
  year      = {2016},
  url       = {},
  doi       = {10.1109/ISSCC.2016.7417941},
  timestamp = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl    = {},
  bibsource = {dblp computer science bibliography,}
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