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"A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at ..."

Satoru Hanzawa et al. (2007)

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DOI: 10.1109/ISSCC.2007.373500

access: closed

type: Conference or Workshop Paper

metadata version: 2020-12-29

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  - conf/isscc/HanzawaKOKMMTMK07
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  - https://dblp.org/rec/conf/isscc/HanzawaKOKMMTMK07
Satoru Hanzawa, Naoki Kitai, Kenichi Osada, Akira Kotabe, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura, Masahiro Moniwa, Takayuki Kawahara:
A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current. ISSCC 2007: 474-616

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