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"A 23.6Mb/mm2 SRAM in 10nm FinFET technology with pulsed PMOS ..."

Zheng Guo et al. (2018)

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DOI: 10.1109/ISSCC.2018.8310251

access: closed

type: Conference or Workshop Paper

metadata version: 2018-03-14

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Zheng Guo, Daeyeon Kim, Satyanand Nalam, Jami Wiedemer, Xiaofei Wang, Eric Karl:
A 23.6Mb/mm² SRAM in 10nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications. ISSCC 2018: 196-198

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