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"A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read ..."

Wanik Cho et al. (2022)

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DOI: 10.1109/ISSCC42614.2022.9731785

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-26

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  dblp key:
  - conf/isscc/ChoJKNLNKLCKLCJ22
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  - https://dblp.org/rec/conf/isscc/ChoJKNLNKLCKLCJ22
Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Nam, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jae-Hyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Sung-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junyoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichan Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyowon Jin:
A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density. ISSCC 2022: 134-135

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