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"Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with ..."

Zong Jie Shen et al. (2019)

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DOI: 10.1109/ISOCC47750.2019.9027657

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

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  dblp key:
  - conf/isocc/ShenZYZ19
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Zong Jie Shen, Ce Zhou Zhao, Li Yang, Chun Zhao:
Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures. ISOCC 2019: 182-183

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