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"A low power, high speed FinFET based 6T SRAM cell with enhanced write ..."

Rahaprian Mudiarasan Premavathi et al. (2016)

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DOI: 10.1109/ISOCC.2016.7799802

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-26

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  dblp key:
  - conf/isocc/PremavathiTCL16
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Rahaprian Mudiarasan Premavathi, Qiang Tong, Ken Choi, Yunsik Lee:
A low power, high speed FinFET based 6T SRAM cell with enhanced write ability and read stability. ISOCC 2016: 311-312

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