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"A Ku-band high-isolation SPDT switch in 0.35um SiGe BiCMOS technology."

Wenju Li, Kaixue Ma, Shouxian Mou (2016)

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DOI: 10.1109/ISICIR.2016.7829686

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

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  dblp key:
  - conf/isicir/LiMM16
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Wenju Li, Kaixue Ma, Shouxian Mou:
A Ku-band high-isolation SPDT switch in 0.35um SiGe BiCMOS technology. ISIC 2016: 1-4

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