"A 10 to 170 GHz distributed amplifier using 130-nm SiGe HBTs."

Yihu Li et al. (2016)

Details and statistics

DOI: 10.1109/ISICIR.2016.7829679

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

a service of  Schloss Dagstuhl - Leibniz Center for Informatics