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"A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET."

Alisha Oraon et al. (2017)

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DOI: 10.1109/ISED.2017.8303939

access: closed

type: Conference or Workshop Paper

metadata version: 2022-05-06

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  dblp key:
  - conf/ised/OraonSKI17
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  - https://dblp.org/rec/conf/ised/OraonSKI17
Alisha Oraon, Shradha Shreya, Renuka Kumari, Aminul Islam:
A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET. ISED 2017: 1-5

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