"A New Assist Technique to Enhance the Read and Write Margins of Low ..."

Santhosh Keshavarapu, Saumya Jain, Manisha Pattanaik (2012)

> Home

Details and statistics

DOI: 10.1109/ISED.2012.55

access: closed

type: Conference or Workshop Paper

metadata version: 2019-02-15

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/ised/KeshavarapuJP12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/ised/KeshavarapuJP12
Santhosh Keshavarapu, Saumya Jain, Manisha Pattanaik:
A New Assist Technique to Enhance the Read and Write Margins of Low Voltage SRAM Cell. ISED 2012: 97-101

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.