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"A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain ..."

Yuan Lin Yeoh et al. (2013)

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DOI: 10.1109/ISCAS.2013.6572517

access: closed

type: Conference or Workshop Paper

metadata version: 2022-04-09

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Yuan Lin Yeoh, Bo Wang, Xiangyao Yu, Tony T. Kim:
A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. ISCAS 2013: 3030-3033

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