"A 10T SRAM Cell with Enhanced Read Sensing Margin and Weak NMOS Keeper for ..."

M. Sultan M. Siddiqui et al. (2019)

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DOI: 10.1109/ISCAS.2019.8702335

access: closed

type: Conference or Workshop Paper

metadata version: 2020-06-05

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M. Sultan M. Siddiqui, Sudhir Kumar Sharma, Saurabh Porwal, Khatik Bhagvan Pannalal, Sudhir Kumar:
A 10T SRAM Cell with Enhanced Read Sensing Margin and Weak NMOS Keeper for Large Signal Sensing to Improve VDDMIN. ISCAS 2019: 1-5

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