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"Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories."

Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry (2007)

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DOI: 10.1109/ISCAS.2007.378735

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-26

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  - conf/iscas/SalamaSF07
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Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry:
Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories. ISCAS 2007: 2268-2271

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