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"Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 ..."

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen (2023)

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DOI: 10.1109/ISCAS46773.2023.10181917

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-31

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G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen:
Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. ISCAS 2023: 1-4

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