"The effect of atomic layer deposition temperature on switching properties ..."

Katrina A. Morgan et al. (2014)

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DOI: 10.1109/ISCAS.2014.6865158

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Katrina A. Morgan, Ruomeng Huang, Stuart Pearce, C. H. De Groot:
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices. ISCAS 2014: 432-435

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