"Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage ..."

William Vandendaele et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10118180

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-08

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William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, Etienne Nowak, Aurore Constant, Ferdinando Iucolano:
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). IRPS 2023: 1-8

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