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"Defects in 4H-SiC epilayers affecting device yield and reliability."

Robert Stahlbush et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764473

access: closed

type: Conference or Workshop Paper

metadata version: 2022-05-09

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  dblp key:
  - conf/irps/StahlbushMBSOSA22
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  - https://dblp.org/rec/conf/irps/StahlbushMBSOSA22
Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant K. Agarwal:
Defects in 4H-SiC epilayers affecting device yield and reliability. IRPS 2022: 65-1

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