"On the impact of buffer and GaN-channel thickness on current dispersion ..."

Vamsi Putcha et al. (2021)

> Home

Details and statistics

DOI: 10.1109/IRPS46558.2021.9405139

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/PutchaCAZLPWLC21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/PutchaCAZLPWLC21
Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert:
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. IRPS 2021: 1-8

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.