Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case ..."

Peter Moens et al. (2023)

> Home

Details and statistics

DOI: 10.1109/IRPS48203.2023.10117802

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-24

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/MoensGSCLMFD23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/MoensGSCLMFD23
Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij:
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. IRPS 2023: 1-5

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.