"Recombination-Driven Interface Trap Generation in SiC MOSFETs Under ..."

Alberto Marcuzzi et al. (2025)

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DOI: 10.1109/IRPS48204.2025.10982738

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type: Conference or Workshop Paper

metadata version: 2025-10-14

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Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, G. J. Gomez Garcia, A. Feng, T. Grasser, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. IRPS 2025: 1-5

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