"Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC ..."

Sebastian Maaß et al. (2020)

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DOI: 10.1109/IRPS45951.2020.9129232

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher:
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS 2020: 1-6

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