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"PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 ..."

Yun Li et al. (2018)

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DOI: 10.1109/IRPS.2018.8353702

access: closed

type: Conference or Workshop Paper

metadata version: 2022-11-08

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  dblp key:
  - conf/irps/LiWDHDL18
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  - https://dblp.org/rec/conf/irps/LiWDHDL18
Yun Li, K. L. Wang, Shaoyan Di, Peng Huang, Gang Du, Xiao-Yan Liu:
PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics. IRPS 2018: 7-1

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