"Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects."

Patrick Fiorenza et al. (2021)

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DOI: 10.1109/IRPS46558.2021.9405148

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-20

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Patrick Fiorenza, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte:
Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects. IRPS 2021: 1-6

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