Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Towards Understanding the Physics of Gate Switching Instability in Silicon ..."

Maximilian W. Feil et al. (2023)

> Home

Details and statistics

DOI: 10.1109/IRPS48203.2023.10117740

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/FeilWRBASRGG23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/FeilWRBASRGG23
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.