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"Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress."
M. Avramenko et al. (2024)
- M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi

, Matteo Meneghini
:
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS 2024: 54

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