"Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs."

R. Asanovski et al. (2025)

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DOI: 10.1109/IRPS48204.2025.10983851

access: closed

type: Conference or Workshop Paper

metadata version: 2025-07-04

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R. Asanovski, Hiroaki Arimura, J. Ganguly, Pierpaolo Palestri, Alexander Grill, Ben Kaczer, Naoto Horiguchi, Luca Selmi, Jacopo Franco:
Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs. IRPS 2025: 1-6

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