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"Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, ..."

Hitoshi Saito et al. (2021)

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DOI: 10.1109/IMW51353.2021.9439617

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-04

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  - conf/imw2/SaitoWSTSHKFONK21
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  - https://dblp.org/rec/conf/imw2/SaitoWSTSHKFONK21
Hitoshi Saito, J. Watanabe, J. Seino, T. Tamura, N. Sashida, K. Hara, K. Kawabata, A. Fujii, J. Ohno, A. Nakakubo, M. Kojima, T. Shimoyama, H. Wada, Lee Cleveland, H. Luan, R. Sen, N. Leong, T. Gallagher, Thomas Rueckes:
Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed. IMW 2021: 1-4

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